Transistor Power MOSFET IRF520 TO-220 Canal N
ESPECIFICACIONES:
– Package: TO-220-3
– Transistor Polarity: N
– Maximum Drain Source Voltage: 100 V
– Maximum Continuous Drain Current: 7 A
– Maximum Gate Source Voltage ±20V
– Power Dissipation: 60 W
– Number of Elements per Chip: 1
– Maximum Forward Voltage: 100VDC
– Output Power: 60W
– Peak Non-Repetitive Surge Current: 40A
– Maximum Reverse Current: 250uA
– Channel Mode: N-Channel Enhancement
– Peak Reverse Recovery Time: 75ns
– Channel Type: N
– Repetitive Peak Reverse Voltage: 100VDC
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