Transistor Power MOSFET IRF840 TO-220 Canal N
ESPECIFICACIONES:
– Package: TO-220-3
– Transistor Polarity: N
– Maximum Drain Source Voltage: 500 V
– Maximum Continuous: Drain Current: 8 A
– Maximum Gate Source Voltage: ±20V
– Power Dissipation: 44 W
– Number of Elements per Chip: 1
– Maximum Forward Voltage: 500VDC
– Output Power: 44W
– Peak Non-Repetitive Surge Current: 32A
– Maximum Reverse Current: 10uA
– Channel Mode: N-Channel Enhancement
– Peak Reverse Recovery Time: 125ns
– Channel Type: N
– Repetitive Peak Reverse Voltage: 500VDC
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