Transistor Power MOSFET IRF540 TO-220 Canal N
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Features:
• Dynamic dV/dt rating
• Repetitive avalanche rated
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
VDS (V) 100
RDS(on) (ohm) V GS = 10 V 0.077
Qg max. (nC) 72
Qgs (nC) 11
Qgd (nC) 32
Drain-source voltage (VDS): 100 V
Gate-source voltage (VGS): ± 20 V
Continuous drain current: 28 A
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