Transistor Power MOSFET IRF640 TO-220 Canal N
ESPECIFICACIONES:
Package: TO-220-3
Transistor Polarity: N
Maximum Drain Source Voltage: 200 V
Maximum Continuous Drain Current: 18 A
Maximum Gate Source Voltage: ±20V
Power Dissipation: 125 W
Number of Elements per Chip: 1
Maximum Forward Voltage: 200VDC
Output Power: 125W
Peak Non-Repetitive Surge Current: 72A
Maximum Reverse Current: 25uA
Channel Mode: N-Channel Enhancement
Peak Reverse Recovery Time: 80ns
Channel Type: N
Repetitive Peak Reverse Voltage: 200VDC
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